Paper Title:
Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 47-48)
Edited by
H. Richter, M. Kittler and C. Claeys
Pages
353-358
DOI
10.4028/www.scientific.net/SSP.47-48.353
Citation
A. Correia, A. Boutry-Forveille, D. Ballutaud, "Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation", Solid State Phenomena, Vols. 47-48, pp. 353-358, 1996
Online since
July 1995
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