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The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts, p.391
The Impact of Fe and Cu Contamination in the 10¹² at/cm² Range on the Performance of Junction Diodes, p.397
Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices, p.403
Correlation between Dislocations and Electron Transport Properties in Si/SiGe, p.409
Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon, p.419
Investigation of the Dislocation Motion in the Bulk SiGe Crystals, p.425
Ion Beam Sputter Deposited Si_0.8Ge_0.2Epilayers: Lattice Defects and Surface Topology, p.431
GaAIAs Lattice Parameter Dependence on Free Electron Concentration, p.437
Relation between Structural and Carrier Recombination Properties in As-Rich GaAs, p.443

Home > Solid State Phenomena > Gettering and Defect Engineering in Semiconductor... > Dislocation Related Electroluminescence at Room...

Paper Title:

Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon

Periodical	Solid State Phenomena (Volumes 47 - 48)
Main Theme	Gettering and Defect Engineering in Semiconductor Technology VI
Edited by	H. Richter, M. Kittler and C. Claeys
Pages	419-424
DOI	10.4028/www.scientific.net/SSP.47-48.419
Citation	Vitaly V. Kveder et al., 1995, Solid State Phenomena, 47-48, 419
Authors	Vitaly V. Kveder, E.A. Steinman, Hermann Grimmeiss
Price	US$ 28,-

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