Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon |
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| Journal | Solid State Phenomena (Volumes 47 - 48) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology VI |
| Edited by | H. Richter, M. Kittler and C. Claeys |
| Pages | 57-64 |
| DOI | 10.4028/www.scientific.net/SSP.47-48.57 |
| Citation | Jaroslaw Dąbrowski et al., 1995, Solid State Phenomena, 47-48, 57 |
| Authors | Jaroslaw Dąbrowski, Hans Joachim Müssig, G. Wolff |
| Full Paper | 
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