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Gettering and Defect Engineering in Semiconductor Technology VI

Volumes 47 - 48
doi: 10.4028/www.scientific.net/SSP.47-48
Paper Titles published in this Main Theme:
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Paper Title Page

Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation

Authors: F. Gaiseanu

223

Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments

Authors: Jan Vanhellemont, G. Kissinger, Paul Clauws, A. Kaniava, M. Libezny, Eugenijus Gaubas, Eddy Simoen, Hans Richter, C. Claeys

229

Point Defects in Semiconductors - Then and Now

Authors: Sokrates T. Pantelides

237

Oxygen Aggregation Phenomena in Silicon

Authors: R.C. Newman, M.J. Binns, Charalamos A. Londos, S.A. McQuaid, J.H. Tucker

247

New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics

Authors: Valentin V. Emtsev, Gagik A. Oganesyan, K. Schmalz

259

Hydrogen Passivation of Double Donors in Silicon

Authors: Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan

267

Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si

Authors: Eugene B. Yakimov, Isabelle Périchaud, Santo Martinuzzi

275

New Infrared Bands in Neutron-Irradiated Si

Authors: Charalamos A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis

281

Iron Group Impurities in Semiconducting Iron Disilicide

Authors: K. Irmscher, W. Gelhoff, Y. Tomm, H. Lange

287

Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study

Authors: J. Juda, M. Höhne

293

Showing 21 to 30 of 74 Paper Titles
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