Paper Title:
Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers
  Abstract

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Periodical
Solid State Phenomena (Volumes 51-52)
Edited by
S. Pizzini, H.P. Strunk and J.H. Werner
Pages
117-122
DOI
10.4028/www.scientific.net/SSP.51-52.117
Citation
I. Périchaud, J.J. Simon, "Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers", Solid State Phenomena, Vols. 51-52, pp. 117-122, 1996
Online since
May 1996
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