Paper Title:
Growth and Defect Formation in Thin Ge and Si0.8Ge0.2 Layers Ion Beam Sputter Deposited on Si(001)
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 51-52)
Edited by
S. Pizzini, H.P. Strunk and J.H. Werner
Pages
193-198
DOI
10.4028/www.scientific.net/SSP.51-52.193
Citation
W. Dorsch, V. Demuth, H. P. Strunk, N. Mosleh, F. Meyer, C. Schwebel, "Growth and Defect Formation in Thin Ge and Si0.8Ge0.2 Layers Ion Beam Sputter Deposited on Si(001)", Solid State Phenomena, Vols. 51-52, pp. 193-198, 1996
Online since
May 1996
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Price
$32.00
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