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Interface Charge Separation Processes in TiO₂-Based Solar Cells, p.547
Structure Organization of Fullerene Layers for Photovoltaic Devices, p.553
Compensation Doping of Polysilicon Films for Stable Integrated Circuit Resistors, p.561
Physical Properties of Polysilicon Diodes Derived from a Smart Power Technology, p.567
Realization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation Matrix, p.573
Manipulating the Electrical and Optical Properties of Polycrystalline ZnO Based Thin Films, p.579
Analysis of Hot-Carrier Effects, 'Kink' Effect and Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors, p.585
Thermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel Devices, p.597
Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors, p.603

Home > Solid State Phenomena > Polycrystalline Semiconductors IV > Realization of Power Polysilicon Diodes on...

Paper Title:

Realization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation Matrix

Periodical	Solid State Phenomena (Volumes 51 - 52)
Main Theme	Polycrystalline Semiconductors IV
Edited by	S. Pizzini, H.P. Strunk and J.H. Werner
Pages	573-578
DOI	10.4028/www.scientific.net/SSP.51-52.573
Citation	D. Briand et al., 1996, Solid State Phenomena, 51-52, 573
Authors	D. Briand, M. Sarret, T. Mohammed-Brahim, S. Mottet, O. Bonnaud
Keywords	I-V Characteristic, LPCVD, Simulation, Transparent Conducting Oxide (TCO)
Price	US$ 28,-

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