Paper Title:
Thermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel Devices
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 51-52)
Edited by
S. Pizzini, H.P. Strunk and J.H. Werner
Pages
597-602
DOI
10.4028/www.scientific.net/SSP.51-52.597
Citation
G. Tallarida, P. Migliorato, M. Quinn, C. Reita, "Thermal and Field-Induced Generation Mechanisms in Polysilicon Thin Film Transistors: A Comparison between n-Channel and p-Channel Devices", Solid State Phenomena, Vols. 51-52, pp. 597-602, 1996
Online since
May 1996
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.