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On the Electrical Activity of Fe-Contaminated Silicon Bicrystals, p.75
Microdefects in Polycrystalline Silicon, p.81
Investigations for the Detection of Microdefects in Cast Multicrystalline Silicon, p.87
Dislocation-Related Absorption, Photoluminescence and Birefringence in Deformed n-ZnSe Crystals, p.93
Tight-Binding Total Energy Calculation for Fe, Co and Ni in Silicon, p.99
Polycrystalline Semiconductors: Structure-Property Relationships, p.105
Influence of a Preliminary Phosphorus Diffusion on the Evaluation of the Recombination Strenght of Dislocations in Czochralski Silicon Wafers, p.117
Reconstruction of the Recombination Centre Distribution in Dislocation Impurity Atmosphere in Si, p.123
Transmission Electron Microscopy Studies of Lattice-Mismatched Semiconductor Heterostructures Used for Integrated Optoelectronic Devices, p.131

Home > Solid State Phenomena > Polycrystalline Semiconductors IV > Tight-Binding Total Energy Calculation for Fe, Co...

Paper Title:

Tight-Binding Total Energy Calculation for Fe, Co and Ni in Silicon

Periodical	Solid State Phenomena (Volumes 51 - 52)
Main Theme	Polycrystalline Semiconductors IV
Edited by	S. Pizzini, H.P. Strunk and J.H. Werner
Pages	99-104
DOI	10.4028/www.scientific.net/SSP.51-52.99
Citation	A. Hairie et al., 1996, Solid State Phenomena, 51-52, 99
Authors	A. Hairie, F. Hairie, B. Lebouvier, Jin Ming Chen, E. Paumier, Gerard Nouet
Keywords	Co, Density Matrix, Diffusion, Fe, Growth, Kinetic, Nickel Ni, Precipitation, Segregation, Silicide, Tight Binding, Total Energy
Price	US$ 28,-

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