Epitaxial Growth and Characterization of Nitride Semiconductors |
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| Journal | Solid State Phenomena (Volume 55) |
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| Volume | Semiconductor Materials and Technology |
| Edited by | R.M. Mehra and P.C. Mathur |
| Pages | 1-6 |
| DOI | 10.4028/www.scientific.net/SSP.55.1 |
| Citation | A. Yoshida, 1997, Solid State Phenomena, 55, 1 |
| Authors | A. Yoshida |
| Keywords | InAlN, InN, Nitride Semiconductors, Plasma-Excited MOVPE |
| Full Paper | 
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