Growth of High Purity GaAs Layers by Vapour Phase Epitaxy |
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| Journal | Solid State Phenomena (Volume 55) |
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| Volume | Semiconductor Materials and Technology |
| Edited by | R.M. Mehra and P.C. Mathur |
| Pages | 10-13 |
| DOI | 10.4028/www.scientific.net/SSP.55.10 |
| Citation | K. Chand et al., 1997, Solid State Phenomena, 55, 10 |
| Authors | K. Chand, R.K. Purohit |
| Keywords | Epitaxial Layer, Gallium Arsenide, Photoluminescence (PL), Vapour Phase |
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