Influence of Emitter-Base Junction Displacement on the Band Structure in Heterojunction Bipolar Transistors |
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| Journal | Solid State Phenomena (Volume 55) |
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| Volume | Semiconductor Materials and Technology |
| Edited by | R.M. Mehra and P.C. Mathur |
| Pages | 101-103 |
| DOI | 10.4028/www.scientific.net/SSP.55.101 |
| Citation | K.P. Kumar et al., 1997, Solid State Phenomena, 55, 101 |
| Authors | K.P. Kumar, Amitava DasGupta |
| Keywords | Compositional Grading, Herojunction Bipolar Transistor (HBT), Junction Displacement, Outdiffusion |
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