Paper Title:
Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 55)
Edited by
R.M. Mehra and P.C. Mathur
Pages
123-130
DOI
10.4028/www.scientific.net/SSP.55.123
Citation
O. Prakash, S. Singh, "Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment", Solid State Phenomena, Vol. 55, pp. 123-130, 1997
Online since
August 1997
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Price
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