Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics |
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| Journal | Solid State Phenomena (Volume 55) |
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| Volume | Semiconductor Materials and Technology |
| Edited by | R.M. Mehra and P.C. Mathur |
| Pages | 26-28 |
| DOI | 10.4028/www.scientific.net/SSP.55.26 |
| Citation | Nandita Dasgupta et al., 1997, Solid State Phenomena, 55, 26 |
| Authors | Nandita Dasgupta, Srinivasa Murthy G.B |
| Keywords | Gallium Arsenide, Mesa Isolation, MESFETs, Self-Aligned |
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