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Temperature-Dependent Behaviour of Chalcogenide Thin Film Contacts on Porous Silicon

Journal Solid State Phenomena (Volume 55)
Volume Semiconductor Materials and Technology
Edited by R.M. Mehra and P.C. Mathur
Pages 77-79
DOI 10.4028/www.scientific.net/SSP.55.77
Citation S. Chakrabarti et al., 1997, Solid State Phenomena, 55, 77
Authors S. Chakrabarti, S. Dhar
Keywords Current-Voltage Characteristic, Porous Silicon (PS), Schottky Barrier
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