Annealing Behaviour of High Energy 120Sn Implanted GaAs |
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| Journal | Solid State Phenomena (Volume 55) |
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| Volume | Semiconductor Materials and Technology |
| Edited by | R.M. Mehra and P.C. Mathur |
| Pages | 98-100 |
| DOI | 10.4028/www.scientific.net/SSP.55.98 |
| Citation | Y.P. Ali et al., 1997, Solid State Phenomena, 55, 98 |
| Authors | Y.P. Ali, V.P. Salvi, A.M. Narsale, B.M. Arora, D. Kanjilal, G.K. Mehta |
| Keywords | Annealing, GaAs, MeV Ion Implantation, Radiation Damage |
| Full Paper | 
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