Semiconductor Materials and Technology
Solid State Phenomena Volume 55
doi:10.4028/www.scientific.net/SSP.55
-
p123
Role of Oxygen on Donor Formation in CZ-Silicon During 430-630 °C Heat Treatment
[
360 K
]
Authors: O. Prakash, Sohan Singh
-
p131
Photoinduced Metastabilities in Organopolysilane Films
[
321 K
]
Authors: K. Shimakawa
-
p137
Position of Dangling Bond States in Doped a-Si:H
[
131 K
]
Authors: Ashwini K. Sinha, S.K. Tripathi, G.S. Narayana, S.C. Agarwal
-
p140
Potential Fluctuations and Staebler-Wronski Effect
[
147 K
]
Authors: P. Agarwal, S.C. Agarwal
-
p143
Energy Spectrum of Semiconductor Quantum Wells with Error Function Profile: Tunneling Resonance Calculation and Experiment
[
163 K
]
Authors: S. Ghosh, B.M. Arora
-
p146
Laser Induced Recrystallisation of Electrophoretically Deposited CdTe and CulnSe2 Films
[
219 K
]
Authors: P.C. Pande, S. Bocking, R.W. Miles, M.J. Carter, R. Hill
-
p149
Field Effect Studies on MIS-Structure of P-Type CulnTe2 Films Having Excess Cu and In
[
154 K
]
Authors: M. Dashtiani, O.P. Sharma, B.R. Sethi
-
p153
Direct Microfabrication of Chalcogenide Glasses by Light and Electron-Beam Exposures
[
342 K
]
Authors: Kenji Tanaka, Naoaki Yoshida
-
p159
The Impurity Doping in Widegap Semiconductors
[
242 K
]
Authors: T. Ido, H. Goto
-
p164
Phonon Conductivity in Arsenic Doped Germanium at Low Temperature for Intermediate Donor Concentration
[
119 K
]
Authors: M.K. Roy, B. Deb
-
p167
Reactive Plasma Processes for the Fabrication of Nano-Dimensional Semiconductor Devices
[
372 K
]
Authors: U.S. Tandon
-
p174
Synthesis and Optical Characteristics of Solution Grown HgxCd1-xS Thin Films
[
118 K
]
Authors: L.P. Deshmukh, K.M. Garadkar, G.S. Shahane, P.P. Hankare
-
p177
Magnetoresistance Measurements on Single Element Photoconductive Hg1-xCdxTe Detectors
[
149 K
]
Authors: D. Srinivasan, K. Sethupathi, V. Sankaranarayanan, G. Rangarajan, R. Ashokan, B.L. Sharma, H.S. Dewan, V. Gopal
-
p180
Effect of Heavy Doping on Dark Conductivity of TBP Doped n-Type a-Si:H Films
[
163 K
]
Authors: R.M. Mehra, I. Kaur, P.C. Mathur
-
p183
Barrier Height of Ga-pSi(p) Schottky Diodes
[
144 K
]
Authors: K.D. Patel, B.P. Modi, R. Srivastava