Interaction of Impurities and Dislocations in Silicon before and after External Gettering |
| Journal |
Solid State Phenomena (Volumes 57 - 58) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VII |
| Edited by |
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Pages |
103-108 |
| DOI |
10.4028/www.scientific.net/SSP.57-58.103 |
| Citation |
Isabelle Périchaud et al., 1997, Solid State Phenomena, 57-58, 103 |
| Authors |
Isabelle Périchaud, Santo Martinuzzi |
| Keywords |
Dislocations, Gettering, Impurities, Recombination Strength, Silicon |
| Full Paper |
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