Paper Title:

Interaction of Impurities and Dislocations in Silicon before and after External Gettering

Periodical Solid State Phenomena (Volumes 57 - 58)
Main Theme Gettering and Defect Engineering in Semiconductor Technology VII
Edited by C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages 103-108
DOI 10.4028/www.scientific.net/SSP.57-58.103
Citation Isabelle Périchaud et al., 1997, Solid State Phenomena, 57-58, 103
Authors Isabelle Périchaud, Santo Martinuzzi
Keywords Dislocation, Gettering, Impurities, Recombination Strength, Silicon
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