Paper Title:
Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
155-160
DOI
10.4028/www.scientific.net/SSP.57-58.155
Citation
E. Gaubas, J. Vanhellemont, E. Simoen, C. Claeys, W. Seifert, "Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements", Solid State Phenomena, Vols. 57-58, pp. 155-160, 1997
Online since
July 1997
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.