Paper Title:
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
183-188
DOI
10.4028/www.scientific.net/SSP.57-58.183
Citation
L. I. Khirunenko, Y.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov, "Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium", Solid State Phenomena, Vols. 57-58, pp. 183-188, 1997
Online since
July 1997
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.