Paper Title:
Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
233-238
DOI
10.4028/www.scientific.net/SSP.57-58.233
Citation
H. Feick, M. Moll, "Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors", Solid State Phenomena, Vols. 57-58, pp. 233-238, 1997
Online since
July 1997
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Price
$32.00
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