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Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments, p.287
Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi₂-Precipitates in Silicon, p.293
The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si, p.299
Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals, p.305
The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations, p.313
Deformation Interaction of Defects in Crystal: Concept of Evaluation, p.319
Yield Analysis of CMOS Ics, p.327
The Role of Grown-in Defects in Advanced Silicon Technology, p.337
Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models, p.343

Home > Solid State Phenomena > Gettering and Defect Engineering in Semiconductor... > The Magnesium Related Luminescence in Silicon and...

Paper Title:

The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations

Periodical	Solid State Phenomena (Volumes 57 - 58)
Main Theme	Gettering and Defect Engineering in Semiconductor Technology VII
Edited by	C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages	313-318
DOI	10.4028/www.scientific.net/SSP.57-58.313
Citation	E.A. Steinman et al., 1997, Solid State Phenomena, 57-58, 313
Authors	E.A. Steinman, H.S. Leipner, Hermann Grimmeiss
Keywords	Dislocation, Luminescence, Magnesium, Silicon
Price	US$ 28,-

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