Paper Title:
Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
377-382
DOI
10.4028/www.scientific.net/SSP.57-58.377
Citation
M. Seibt, Y. L. Huang, B. Plikat, "Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon", Solid State Phenomena, Vols. 57-58, pp. 377-382, 1997
Online since
July 1997
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Price
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