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Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon

Journal Solid State Phenomena (Volumes 57 - 58)
Volume Gettering and Defect Engineering in Semiconductor Technology VII
Edited by C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages 393-400
DOI 10.4028/www.scientific.net/SSP.57-58.393
Citation Andrzej Misiuk et al., 1997, Solid State Phenomena, 57-58, 393
Authors Andrzej Misiuk, W. Jung, Barbara Surma, J. Jun, M. Rozental
Keywords Annealing, CZ-Si, Hydrostatic Pressure, Oxygen, Thermal Donor
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