Paper Title:
Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals
| Periodical |
Solid State Phenomena (Volumes 57 - 58)
|
| Main Theme |
Gettering and Defect Engineering in Semiconductor Technology VII
|
| Edited by |
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Pages |
419-424 |
| DOI |
10.4028/www.scientific.net/SSP.57-58.419 |
| Citation |
Yu.L. Iunin et al., 1997, Solid State Phenomena, 57-58, 419 |
| Authors |
Yu.L. Iunin, Valeri I. Orlov, D.V. Dyachenko-Dekov, Nikolay V. Abrosimov, S.N. Rossolenko, W. Schröder |
| Keywords |
Dislocation Mobility, Point Defect, SiGe Alloys |
| Price |
US$ 28,- |