Paper Title:

Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals

Periodical Solid State Phenomena (Volumes 57 - 58)
Main Theme Gettering and Defect Engineering in Semiconductor Technology VII
Edited by C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages 419-424
DOI 10.4028/www.scientific.net/SSP.57-58.419
Citation Yu.L. Iunin et al., 1997, Solid State Phenomena, 57-58, 419
Authors Yu.L. Iunin, Valeri I. Orlov, D.V. Dyachenko-Dekov, Nikolay V. Abrosimov, S.N. Rossolenko, W. Schröder
Keywords Dislocation Mobility, Point Defect, SiGe Alloys
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