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Gettering by Voids in Silicon: A Comparison with other Techniques

Journal Solid State Phenomena (Volumes 57 - 58)
Volume Gettering and Defect Engineering in Semiconductor Technology VII
Edited by C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages 43-52
DOI 10.4028/www.scientific.net/SSP.57-58.43
Citation Vito Raineri, 1997, Solid State Phenomena, 57-58, 43
Authors Vito Raineri
Keywords Gettering, Metal Impurity, Silicon, Void
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