Paper Title:
X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
459-464
DOI
10.4028/www.scientific.net/SSP.57-58.459
Citation
P. Zaumseil, S. Kar, "X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon", Solid State Phenomena, Vols. 57-58, pp. 459-464, 1997
Online since
July 1997
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.