Paper Title:
An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
483-488
DOI
10.4028/www.scientific.net/SSP.57-58.483
Citation
S. Kar, P. Zaumseil, S. Ashok, "An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry", Solid State Phenomena, Vols. 57-58, pp. 483-488, 1997
Online since
July 1997
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Price
$32.00
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