Paper Title:
A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries
  Abstract

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Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
513-518
DOI
10.4028/www.scientific.net/SSP.57-58.513
Citation
O. Velichko, A.K. Fedotov, "A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries", Solid State Phenomena, Vols. 57-58, pp. 513-518, 1997
Online since
July 1997
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Price
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