Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions |
| Journal |
Solid State Phenomena (Volumes 57 - 58) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VII |
| Edited by |
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Pages |
525-0 |
| DOI |
10.4028/www.scientific.net/SSP.57-58.525 |
| Citation |
F. Gaiseanu et al., 1997, Solid State Phenomena, 57-58, 525 |
| Authors |
F. Gaiseanu, M. Sachelarie, D. Sachelarie, Jaume Esteve |
| Keywords |
P-N Junction, Forward Current, Gold Diffusion |
| Full Paper |
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