Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon |
| Journal |
Solid State Phenomena (Volumes 57 - 58) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VII |
| Edited by |
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Pages |
75-80 |
| DOI |
10.4028/www.scientific.net/SSP.57-58.75 |
| Citation |
H. Takahashi et al., 1997, Solid State Phenomena, 57-58, 75 |
| Authors |
H. Takahashi, Hiroshi Yamada Kaneta, Masashi Suezawa |
| Keywords |
CZ-Si, Internal Gettering, Iron, Oxygen Precipitates |
| Full Paper |
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