Paper Title:
A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 57-58)
Edited by
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler
Pages
81-90
DOI
10.4028/www.scientific.net/SSP.57-58.81
Citation
M. B. Shabani, T. Yoshimi, S. Okuuchi, A. Kaniava, "A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers", Solid State Phenomena, Vols. 57-58, pp. 81-90, 1997
Online since
July 1997
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Price
$32.00
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