Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon |
| Journal |
Solid State Phenomena (Volumes 57 - 58) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VII |
| Edited by |
C. Claeys, J. Vanhellemont, H. Richter and M. Kittler |
| Pages |
91-96 |
| DOI |
10.4028/www.scientific.net/SSP.57-58.91 |
| Citation |
Reinhart Job et al., 1997, Solid State Phenomena, 57-58, 91 |
| Authors |
Reinhart Job, Wolfgang R. Fahrner, Alexander G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer |
| Keywords |
Hydrogen Implantation in Silicon, Oxygen in Silicon, Oxygen Precipitates, Thermal Donor |
| Full Paper |
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