Gettering and Defect Engineering in Semiconductor Technology
Solid State Phenomena Volumes 6 - 7
doi:10.4028/www.scientific.net/SSP.6-7
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p1
Defect Engineering in VLSI-Technologies
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720 K
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Authors: H. Reimer, W. Nitzsche, Manfred Reiche -
p13
Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films
[
305 K
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Authors: Robert J. Falster -
p21
Advances in the Understanding of Oxygen and Carbon in Silicon
[
750 K
]
Authors: C. Claeys, Jan Vanhellemont -
p33
Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
[
290 K
]
Authors: J. Reichel, Manfred Reiche, H. Geuther -
p41
Effect of Volume Defects on Gold Gettering in CZ-SI
[
289 K
]
Authors: K. Schmalz, I. Babanskaya, H. Gdanitz, F.G. Kirscht -
p49
Investigations of the Behaviour of Transition Metals in Silicon
[
424 K
]
Authors: W. Nitzsche, O. Brodersen, S. Hopfe, Manfred Reiche, I. Burck -
p57
Defect Engineering for Bicmos-Technology
[
377 K
]
Authors: G. Ritter, K.-E. Ehwald, P. Schley -
p65
Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
[
431 K
]
Authors: M. Eckstein, A. Jakubowicz, M. Bode, H.U. Habermeier -
p73
Implantation Induced Defect Modification in P Doped Bipolar Structures
[
406 K
]
Authors: D. Krueger, J. Dziesiaty -
p79
The Properties of the Defects in Heavy Implanted Silicon
[
623 K
]
Authors: V.G. Litovchenko, B.N. Romanyuk -
p93
Defect Formation and Lateral Oxidation during Locos Processing
[
416 K
]
Authors: D. Knoll, T. Grabolla, K.-E. Ehwald -
p101
Defects and Their Influence on Parasitic Devices in Integrated Circuits
[
24 K
]
Authors: R. Prejdova -
p103
Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
[
356 K
]
Authors: F.G. Kirscht, P. Fricke, J. Reichel, I. Babanskaya, R. Bertoldi, G. Buchheim, C. Hansch, P. Hübler, H.-J. Machold, R. Scharfe -
p111
Buried Layer Processing for Advanced Bipolar Technology
[
469 K
]
Authors: Eddy Simoen, L. Deferm, Jan Vanhellemont, C. Claeys -
p119
Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
[
382 K
]
Authors: Erzsébet Hild, J. Seres, E.K. Pal, S. Nouredin, T. Kormàny
