Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography |
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| Journal | Solid State Phenomena (Volumes 6 - 7) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology |
| Edited by | M. Kittler |
| Pages | 119-126 |
| DOI | 10.4028/www.scientific.net/SSP.6-7.119 |
| Citation | Erzsébet Hild et al., 1989, Solid State Phenomena, 6-7, 119 |
| Authors | Erzsébet Hild, J. Seres, E.K. Pal, S. Nouredin, T. Kormàny |
| Full Paper | 
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