Paper Title:
Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 6-7)
Edited by
M. Kittler
Pages
243-250
DOI
10.4028/www.scientific.net/SSP.6-7.243
Citation
P. Zaumseil, U. Winter, R. Fabbri, M. Servidori, S. Solmi, "Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon", Solid State Phenomena, Vols. 6-7, pp. 243-250, 1989
Online since
January 1989
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