Paper Title:
Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 6-7)
Edited by
M. Kittler
Pages
539-546
DOI
10.4028/www.scientific.net/SSP.6-7.539
Citation
D. Ballutaud, M. Aucouturier, "Defect Microchemistry at the Si/SiO2 Interface Grown on Polycrystalline Silicon Sheets. Hydrogenation Effect Study", Solid State Phenomena, Vols. 6-7, pp. 539-546, 1989
Online since
January 1989
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Price
$32.00
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