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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

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• p243 Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon   [ 345 K ]
  Authors: P. Zaumseil, U. Winter, R. Fabbri, Marco Servidori, Sandro Solmi
• p251 Impurity Gettering in Semicrystalline Silicon Solar Cells   [ 138 K ]
  Authors: M.A.G. Soler, I. Pereyra, A.M. Andrade
• p257 Formation and Defect Structure of Fe-B-Fe Complexes in Silicon   [ 350 K ]
  Authors: W. Gehlhoff, U. Rehse
• p265 Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries   [ 665 K ]
  Authors: J.L. Maurice
• p277 Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors   [ 588 K ]
  Authors: Hermann G. Grimmeiss, Mats Kleverman
• p289 Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors   [ 480 K ]
  Authors: B.Ya. Farber, H.G. Minasyan, V.I. Nikitenko
• p301 I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon   [ 267 K ]
  Authors: Vitaly V. Kveder, Teimuraz Mchedlidze, Yu.A. Ossipyan, A.I. Shalynin
• p309 Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy   [ 393 K ]
  Authors: H. Bartsch, W. Einbrodt
• p315 Auger Recombination in Heavily-Doped p+ Silicon   [ 316 K ]
  Authors: S. Voinigescu, A. Müller, Cornel Anton
• p323 Photo-Capacitive Spectroscopy of Sulphur Atoms and Heat Treatment Defects in n-Si   [ 346 K ]
  Authors: V.M. Arutyunyan, A.P. Akhoyan, R.S. Barseghyan, B.O. Semerdjian
• p329 EPR Detection of Complex Platinum-Related Defects in Silicon   [ 192 K ]
  Authors: M. Höhne
• p335 Defect Kinetics and Impurity Diffusion During Hot Implants Into Silicon   [ 223 K ]
  Authors: K. Holldack, H. Kerkow, Manfred Reiche
• p341 The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen   [ 51 K ]
  Authors: Sergei V. Koveshnikov, S.V. Nosenko, Eugene B. Yakimov
• p343 Dislocation Motion in Compound Semiconductors   [ 400 K ]
  Authors: Jürgen Schreiber, H.S. Leipner, H.-R. Höche
• p349 Dislocation Structures after Microdeformation of CaAs Single Crystals   [ 304 K ]
  Authors: H.S. Leipner, M. Surowiec

80 papers on 6 pages: [prev] [1][2]3[4][5][6] [next]

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