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SEM-EBIC Study of Defects in Epitaxial AlGaN Layers

Journal Solid State Phenomena (Volumes 63 - 64)
Volume Beam Injection Assessment of Defects in Semiconductors
Edited by M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Pages 131-138
DOI 10.4028/www.scientific.net/SSP.63-64.131
Citation G.N. Panin et al., 1998, Solid State Phenomena, 63-64, 131
Authors G.N. Panin, O.V. Kononenko, V.N. Matveev, Eugene B. Yakimov, Oliver Ambacher
Keywords AlGaN, Diffusion Length, Dislocations, EBIC, Galium Nitride (GaN), Minority Carriers
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