EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement |
| Journal |
Solid State Phenomena (Volumes 63 - 64) |
| Volume |
Beam Injection Assessment of Defects in Semiconductors |
| Edited by |
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter |
| Pages |
25-32 |
| DOI |
10.4028/www.scientific.net/SSP.63-64.25 |
| Citation |
Carl E. Norman et al., 1998, Solid State Phenomena, 63-64, 25 |
| Authors |
Carl E. Norman, N. Griffin, D.D. Arnone, D.J. Paul, M. Pepper, B. Gallas, J.M. Fernández |
| Keywords |
2DEG, Anti-Dots, Cyclotron Resonance, Depletion Region, EBIC, FIR, Lateral Confinement, Modulation Doping, Silicon-Germanium (SiGe), Strained Si, TEM, Virtual Substrate |
| Full Paper |
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