Paper Title:
Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown
  Abstract

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Periodical
Solid State Phenomena (Volumes 63-64)
Edited by
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Pages
395-406
DOI
10.4028/www.scientific.net/SSP.63-64.395
Citation
M. Tamatsuka, K. Miki, "Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown", Solid State Phenomena, Vols. 63-64, pp. 395-406, 1998
Online since
December 1998
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Price
$32.00
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