Paper Title:
Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 63-64)
Edited by
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Pages
407-412
DOI
10.4028/www.scientific.net/SSP.63-64.407
Citation
H. Tomokage, Y. Ishiwata, H. Souno, M. Kawakami, N. Sonoda, "Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique", Solid State Phenomena, Vols. 63-64, pp. 407-412, 1998
Online since
December 1998
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Price
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