Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current |
| Journal |
Solid State Phenomena (Volumes 63 - 64) |
| Volume |
Beam Injection Assessment of Defects in Semiconductors |
| Edited by |
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter |
| Pages |
45-52 |
| DOI |
10.4028/www.scientific.net/SSP.63-64.45 |
| Citation |
C. Donolato, 1998, Solid State Phenomena, 63-64, 45 |
| Authors |
C. Donolato |
| Keywords |
Collection Probability, Diffusion Length, Dislocations, Luminescence Efficiency, Minority Carrier Recombination |
| Full Paper |
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