Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers |
| Journal |
Solid State Phenomena (Volumes 63 - 64) |
| Volume |
Beam Injection Assessment of Defects in Semiconductors |
| Edited by |
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter |
| Pages |
61-68 |
| DOI |
10.4028/www.scientific.net/SSP.63-64.61 |
| Citation |
O.V. Kononchuk et al., 1998, Solid State Phenomena, 63-64, 61 |
| Authors |
O.V. Kononchuk, I.E. Bondarenko, George A. Rozgonyi |
| Keywords |
EBIC, Gate-Oxide Integrity, Nickel Precipitate, SIMOX, TEM |
| Full Paper |
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