Paper Title:
Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 63-64)
Edited by
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Pages
61-68
DOI
10.4028/www.scientific.net/SSP.63-64.61
Citation
O.V. Kononchuk, I.E. Bondarenko, G. A. Rozgonyi, "Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers", Solid State Phenomena, Vols. 63-64, pp. 61-68, 1998
Online since
December 1998
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Price
$32.00
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