Paper Title:
Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
  Abstract

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Periodical
Solid State Phenomena (Volumes 63-64)
Edited by
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter
Pages
77-88
DOI
10.4028/www.scientific.net/SSP.63-64.77
Citation
M. Kittler, J. Lärz, "Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC", Solid State Phenomena, Vols. 63-64, pp. 77-88, 1998
Online since
December 1998
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