Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC |
| Journal |
Solid State Phenomena (Volumes 63 - 64) |
| Volume |
Beam Injection Assessment of Defects in Semiconductors |
| Edited by |
M. Kittler, O. Breitenstein, A. Endrös, W. Schröter |
| Pages |
77-88 |
| DOI |
10.4028/www.scientific.net/SSP.63-64.77 |
| Citation |
Martin Kittler et al., 1998, Solid State Phenomena, 63-64, 77 |
| Authors |
Martin Kittler, J. Lärz |
| Keywords |
2D Dopant Distribution, Channel Length, Low-Energy EBIC, p-n Junction Position |
| Full Paper |
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