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Behaviour of Metallic Contaminants during Mos Processing

Journal Solid State Phenomena (Volumes 65 - 66)
Volume Ultra Clean Processing of Silicon Surfaces IV
Edited by Marc Heyns, Marc Meuris and Paul Mertens
Pages 11-14
DOI 10.4028/www.scientific.net/SSP.65-66.11
Citation Twan Bearda et al., 1998, Solid State Phenomena, 65-66, 11
Authors Twan Bearda, Stefan De Gendt, Lee M. Loewenstein, M. Knotter, Paul W. Mertens, Marc M. Heyns
Keywords Contamination, Diffusion, GOI, Solubility, TXRF, Ultra-Clean Processing
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