Paper Title:
Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor
  Abstract

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Periodical
Solid State Phenomena (Volumes 65-66)
Edited by
Marc Heyns, Marc Meuris and Paul Mertens
Pages
123-126
DOI
10.4028/www.scientific.net/SSP.65-66.123
Citation
M. Ramin, C. Hechtl, A. Haeusler, "Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor", Solid State Phenomena, Vols. 65-66, pp. 123-126, 1999
Online since
November 1998
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