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Kelvin-SPV Measurements of Atomically-Flat Si(111) Surfaces Contaminated with Metallic Ions, p.211
Comparison of Analytical Methods for Residue Detection of Resist Removal Processes, p.215
Dry Cleaning Technologies Using UV-Excited Radicals and Cryogenic Aerosols, p.219
A New HF Vapor Process for Native Oxide Removal, Suited for Cluster Applications, p.225
Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth, p.229
Role of UV/Chlorine Exposure during Dry Surface Conditioning before Integrated Epi Deposition Process, p.233
Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods, p.237
Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO₂/Si Interface, p.241
Metal Enhanced Oxidation of Silicon, p.245

Home > Solid State Phenomena > Ultra Clean Processing of Silicon Surfaces IV > Silicon Surface Cleaning for Low Temperature...

Paper Title:

Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth

Periodical	Solid State Phenomena (Volumes 65 - 66)
Main Theme	Ultra Clean Processing of Silicon Surfaces IV
Edited by	Marc Heyns, Marc Meuris and Paul Mertens
Pages	229-232
DOI	10.4028/www.scientific.net/SSP.65-66.229
Citation	Masao Mayuzumi et al., 1998, Solid State Phenomena, 65-66, 229
Authors	Masao Mayuzumi, M. Imai, S. Nakahara, Katsuya Inoue, J. Takahashi, Tadahiro Ohmi
Keywords	Pre-Treatment, Protective Film, Silicon Epitaxial Growth
Price	US$ 28,-

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