Paper Title:
Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si Interface
| Periodical | Solid State Phenomena (Volumes 65 - 66) |
|---|---|
| Main Theme | Ultra Clean Processing of Silicon Surfaces IV |
| Edited by | Marc Heyns, Marc Meuris and Paul Mertens |
| Pages | 241-244 |
| DOI | 10.4028/www.scientific.net/SSP.65-66.241 |
| Citation | H. Nohira et al., 1998, Solid State Phenomena, 65-66, 241 |
| Authors | H. Nohira, Kunimasa Takahashi, Takeshi Hattori |
| Keywords | Energy Loss Spectroscopy, O1s Photoelectron, Silicon Oxide (SiO), Transition Layer, X-Ray Photoelectron Spectroscopy (XPS) |
| Price | US$ 28,- |
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