The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface |
| Journal |
Solid State Phenomena (Volumes 65 - 66) |
| Volume |
Ultra Clean Processing of Silicon Surfaces IV |
| Edited by |
Marc Heyns, Marc Meuris and Paul Mertens |
| Pages |
291-0 |
| DOI |
10.4028/www.scientific.net/SSP.65-66.291 |
| Citation |
Y.B. Kim et al., 1998, Solid State Phenomena, 65-66, 291 |
| Authors |
Y.B. Kim, Mikhail R. Baklanov, Thierry Conard, Serge Vanhaelemeersch, W. Vandervorst |
| Keywords |
Fluorocarbon, Plasma Etch, Polymer, Post Cleaning, Residue, Si-C, Si-F, Silicon, X-Ray Photoelectron Spectroscopy (XPS) |
| Full Paper |
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